Electronic and excitonic properties of self-assembled semiconductor quantum rings
Identifieur interne : 005535 ( Main/Repository ); précédent : 005534; suivant : 005536Electronic and excitonic properties of self-assembled semiconductor quantum rings
Auteurs : RBID : Pascal:10-0091535Descripteurs français
- Pascal (Inist)
- Déformation mécanique, Mesure température, Interaction coulombienne, Exciton, Photoluminescence, Microscopie tunnel balayage, Semiconducteur III-V, Nanotechnologie, Autoassemblage, Spectre énergie, Aimantation, Arséniure d'indium, Arséniure de gallium, Composé III-V, Effet champ magnétique, Anisotropie, GaAs, As Ga, 0130C, 8920, InxGa1-xAs, 7135, 7867, 8116D.
- Wicri :
- concept : Nanotechnologie.
English descriptors
- KwdEn :
Abstract
Theoretical analysis of the electron energy spectrum and the magnetization in a strained InxGa1-xAs/GaAs self-assembled quantum ring (SAQR) is performed using realistic parameters, determined from the cross-sectional scanning-tunneling microscopy characterization. The Aharonov-Bohm oscillations in the persistent current have been observed in low temperature magnetization measurements on these SAQRs. The effect of the Coulomb interaction on the energy spectra of SAQRs is studied for rings with two electrons and with an exciton. Our analysis of the photoluminescence spectrum in magnetic fields up to 30 T shows that the excitonic properties strongly depend on the anisotropic shape, size, composition and strain of the SAQRs and is in a good agreement with the experimental data.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electronic and excitonic properties of self-assembled semiconductor quantum rings</title><author><name sortKey="Fomin, V M" uniqKey="Fomin V">V. M. Fomin</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Theoretische Fysica van de Vaste Stoffen, Universiteit Antwerpen, Groenenborgerlaan 171</s1><s2>2020 Antwerpen</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>2020 Antwerpen</wicri:noRegion><orgName type="university">Université d'Anvers</orgName><placeName><settlement type="city">Anvers</settlement><region type="district" nuts="2">Province d'Anvers</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Photonics and Semiconductor Nanophysics, COBRA, TU Eindhoven, Den Dolech 2, Postbus 513</s1><s2>5600 MB Eindhoven</s2><s3>NLD</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>5600 MB Eindhoven</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Physics of Multilayer Structures and Molecular Magnetism, State University of Moldova, str. A. Mateevici 60</s1><s2>2009 Chişinău</s2><s3>MDA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>2009 Chişinău</wicri:noRegion></affiliation></author><author><name sortKey="Gladilin, V N" uniqKey="Gladilin V">V. N. Gladilin</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Theoretische Fysica van de Vaste Stoffen, Universiteit Antwerpen, Groenenborgerlaan 171</s1><s2>2020 Antwerpen</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>2020 Antwerpen</wicri:noRegion><orgName type="university">Université d'Anvers</orgName><placeName><settlement type="city">Anvers</settlement><region type="district" nuts="2">Province d'Anvers</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Physics of Multilayer Structures and Molecular Magnetism, State University of Moldova, str. A. Mateevici 60</s1><s2>2009 Chişinău</s2><s3>MDA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>2009 Chişinău</wicri:noRegion></affiliation></author><author><name sortKey="Devreese, J T" uniqKey="Devreese J">J. T. Devreese</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Theoretische Fysica van de Vaste Stoffen, Universiteit Antwerpen, Groenenborgerlaan 171</s1><s2>2020 Antwerpen</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>2020 Antwerpen</wicri:noRegion><orgName type="university">Université d'Anvers</orgName><placeName><settlement type="city">Anvers</settlement><region type="district" nuts="2">Province d'Anvers</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Photonics and Semiconductor Nanophysics, COBRA, TU Eindhoven, Den Dolech 2, Postbus 513</s1><s2>5600 MB Eindhoven</s2><s3>NLD</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>5600 MB Eindhoven</wicri:noRegion></affiliation></author><author><name sortKey="Blokland, J H" uniqKey="Blokland J">J. H. Blokland</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>HFML, IMM, Radboud University Nijmegen, Toernooiveld 7</s1><s2>6525 ED Nijmegen</s2><s3>NLD</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>6525 ED Nijmegen</wicri:noRegion></affiliation></author><author><name sortKey="Christianen, P C M" uniqKey="Christianen P">P. C. M. Christianen</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>HFML, IMM, Radboud University Nijmegen, Toernooiveld 7</s1><s2>6525 ED Nijmegen</s2><s3>NLD</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>6525 ED Nijmegen</wicri:noRegion></affiliation></author><author><name sortKey="Maan, J C" uniqKey="Maan J">J. C. Maan</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>HFML, IMM, Radboud University Nijmegen, Toernooiveld 7</s1><s2>6525 ED Nijmegen</s2><s3>NLD</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>6525 ED Nijmegen</wicri:noRegion></affiliation></author><author><name sortKey="Taboada, A G" uniqKey="Taboada A">A. G. Taboada</name><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>CNM-CSIC, Instituto de Microelectrónica de Madrid, C/Isaac Newton 8, Tres Cantos</s1><s2>28760 Madrid</s2><s3>ESP</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté de Madrid</region></placeName></affiliation></author><author><name sortKey="Granados, D" uniqKey="Granados D">D. Granados</name><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>CNM-CSIC, Instituto de Microelectrónica de Madrid, C/Isaac Newton 8, Tres Cantos</s1><s2>28760 Madrid</s2><s3>ESP</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté de Madrid</region></placeName></affiliation></author><author><name sortKey="Garcia, J M" uniqKey="Garcia J">J. M. Garcia</name><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>CNM-CSIC, Instituto de Microelectrónica de Madrid, C/Isaac Newton 8, Tres Cantos</s1><s2>28760 Madrid</s2><s3>ESP</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté de Madrid</region></placeName></affiliation></author><author><name sortKey="Kleemans, N A J M" uniqKey="Kleemans N">N. A. J. M. Kleemans</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Photonics and Semiconductor Nanophysics, COBRA, TU Eindhoven, Den Dolech 2, Postbus 513</s1><s2>5600 MB Eindhoven</s2><s3>NLD</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>5600 MB Eindhoven</wicri:noRegion></affiliation></author><author><name sortKey="Van Genuchten, H C M" uniqKey="Van Genuchten H">H. C. M. Van Genuchten</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Photonics and Semiconductor Nanophysics, COBRA, TU Eindhoven, Den Dolech 2, Postbus 513</s1><s2>5600 MB Eindhoven</s2><s3>NLD</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>5600 MB Eindhoven</wicri:noRegion></affiliation></author><author><name sortKey="Bozkurt, M" uniqKey="Bozkurt M">M. Bozkurt</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Photonics and Semiconductor Nanophysics, COBRA, TU Eindhoven, Den Dolech 2, Postbus 513</s1><s2>5600 MB Eindhoven</s2><s3>NLD</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>5600 MB Eindhoven</wicri:noRegion></affiliation></author><author><name sortKey="Koenraad, P M" uniqKey="Koenraad P">P. M. Koenraad</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Photonics and Semiconductor Nanophysics, COBRA, TU Eindhoven, Den Dolech 2, Postbus 513</s1><s2>5600 MB Eindhoven</s2><s3>NLD</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>5600 MB Eindhoven</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0091535</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 10-0091535 INIST</idno><idno type="RBID">Pascal:10-0091535</idno><idno type="wicri:Area/Main/Corpus">004A00</idno><idno type="wicri:Area/Main/Repository">005535</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anisotropy</term><term>Coulomb interaction</term><term>Energy spectra</term><term>Excitons</term><term>Gallium arsenides</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Magnetic field effects</term><term>Magnetization</term><term>Nanotechnology</term><term>Photoluminescence</term><term>Scanning tunneling microscopy</term><term>Self-assembly</term><term>Strains</term><term>Temperature measurement</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Déformation mécanique</term><term>Mesure température</term><term>Interaction coulombienne</term><term>Exciton</term><term>Photoluminescence</term><term>Microscopie tunnel balayage</term><term>Semiconducteur III-V</term><term>Nanotechnologie</term><term>Autoassemblage</term><term>Spectre énergie</term><term>Aimantation</term><term>Arséniure d'indium</term><term>Arséniure de gallium</term><term>Composé III-V</term><term>Effet champ magnétique</term><term>Anisotropie</term><term>GaAs</term><term>As Ga</term><term>0130C</term><term>8920</term><term>InxGa1-xAs</term><term>7135</term><term>7867</term><term>8116D</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Nanotechnologie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Theoretical analysis of the electron energy spectrum and the magnetization in a strained In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs self-assembled quantum ring (SAQR) is performed using realistic parameters, determined from the cross-sectional scanning-tunneling microscopy characterization. The Aharonov-Bohm oscillations in the persistent current have been observed in low temperature magnetization measurements on these SAQRs. The effect of the Coulomb interaction on the energy spectra of SAQRs is studied for rings with two electrons and with an exciton. Our analysis of the photoluminescence spectrum in magnetic fields up to 30 T shows that the excitonic properties strongly depend on the anisotropic shape, size, composition and strain of the SAQRs and is in a good agreement with the experimental data.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>7364</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Electronic and excitonic properties of self-assembled semiconductor quantum rings</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Nanotechnology IV : 4-6 May 2009, Dresden, Germany</s1></fA09><fA11 i1="01" i2="1"><s1>FOMIN (V. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>GLADILIN (V. N.)</s1></fA11><fA11 i1="03" i2="1"><s1>DEVREESE (J. T.)</s1></fA11><fA11 i1="04" i2="1"><s1>BLOKLAND (J. H.)</s1></fA11><fA11 i1="05" i2="1"><s1>CHRISTIANEN (P. C. M.)</s1></fA11><fA11 i1="06" i2="1"><s1>MAAN (J. C.)</s1></fA11><fA11 i1="07" i2="1"><s1>TABOADA (A. G.)</s1></fA11><fA11 i1="08" i2="1"><s1>GRANADOS (D.)</s1></fA11><fA11 i1="09" i2="1"><s1>GARCIA (J. M.)</s1></fA11><fA11 i1="10" i2="1"><s1>KLEEMANS (N. A. J. M.)</s1></fA11><fA11 i1="11" i2="1"><s1>VAN GENUCHTEN (H. C. M.)</s1></fA11><fA11 i1="12" i2="1"><s1>BOZKURT (M.)</s1></fA11><fA11 i1="13" i2="1"><s1>KOENRAAD (P. M.)</s1></fA11><fA12 i1="01" i2="1"><s1>WIXFORTH (Achim)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>LORKE (Axel)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>SIMMEL (Friedrich C.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Theoretische Fysica van de Vaste Stoffen, Universiteit Antwerpen, Groenenborgerlaan 171</s1><s2>2020 Antwerpen</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Photonics and Semiconductor Nanophysics, COBRA, TU Eindhoven, Den Dolech 2, Postbus 513</s1><s2>5600 MB Eindhoven</s2><s3>NLD</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></fA14><fA14 i1="03"><s1>Physics of Multilayer Structures and Molecular Magnetism, State University of Moldova, str. A. Mateevici 60</s1><s2>2009 Chişinău</s2><s3>MDA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="04"><s1>HFML, IMM, Radboud University Nijmegen, Toernooiveld 7</s1><s2>6525 ED Nijmegen</s2><s3>NLD</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="05"><s1>CNM-CSIC, Instituto de Microelectrónica de Madrid, C/Isaac Newton 8, Tres Cantos</s1><s2>28760 Madrid</s2><s3>ESP</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA18 i1="02" i2="1"><s1>SPIE Europe</s1><s3>INC</s3><s9>org-cong.</s9></fA18><fA18 i1="03" i2="1"><s1>VDE/VDI-Gesellschaft für Mikroelektronik, Mikro- und Feinwerktechnik</s1><s3>DEU</s3><s9>org-cong.</s9></fA18><fA20><s2>736402.1-736402.11</s2></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham, Wash.</s2></fA25><fA26 i1="01"><s0>978-0-8194-7638-8</s0></fA26><fA26 i1="02"><s0>0-8194-7638-2</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000172984240010</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>26 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0091535</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Theoretical analysis of the electron energy spectrum and the magnetization in a strained In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs self-assembled quantum ring (SAQR) is performed using realistic parameters, determined from the cross-sectional scanning-tunneling microscopy characterization. The Aharonov-Bohm oscillations in the persistent current have been observed in low temperature magnetization measurements on these SAQRs. The effect of the Coulomb interaction on the energy spectra of SAQRs is studied for rings with two electrons and with an exciton. Our analysis of the photoluminescence spectrum in magnetic fields up to 30 T shows that the excitonic properties strongly depend on the anisotropic shape, size, composition and strain of the SAQRs and is in a good agreement with the experimental data.</s0></fC01><fC02 i1="01" i2="3"><s0>001B00A30C</s0></fC02><fC02 i1="02" i2="X"><s0>001D17</s0></fC02><fC02 i1="03" i2="3"><s0>001B70A35</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H67</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Déformation mécanique</s0><s5>03</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Strains</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Mesure température</s0><s5>04</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Temperature measurement</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Interaction coulombienne</s0><s5>05</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Coulomb interaction</s0><s5>05</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Interacción coulombiana</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Exciton</s0><s5>06</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Excitons</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>07</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Microscopie tunnel balayage</s0><s5>30</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Scanning tunneling microscopy</s0><s5>30</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>50</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>50</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Nanotechnologie</s0><s5>61</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Nanotechnology</s0><s5>61</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Autoassemblage</s0><s5>62</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Self-assembly</s0><s5>62</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Spectre énergie</s0><s5>63</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Energy spectra</s0><s5>63</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Aimantation</s0><s5>64</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Magnetization</s0><s5>64</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>65</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>65</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Arséniure de gallium</s0><s2>NK</s2><s5>66</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>66</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Composé III-V</s0><s5>67</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>III-V compound</s0><s5>67</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>67</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Effet champ magnétique</s0><s5>68</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Magnetic field effects</s0><s5>68</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Anisotropie</s0><s5>69</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Anisotropy</s0><s5>69</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>As Ga</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>0130C</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>8920</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>InxGa1-xAs</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>7135</s0><s4>INC</s4><s5>91</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>7867</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>8116D</s0><s4>INC</s4><s5>93</s5></fC03><fN21><s1>060</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Nanotechnology</s1><s2>04</s2><s3>Dresden DEU</s3><s4>2009</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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